Book/Report

FZJ-2019-01691

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Ultra-dünne Oxid- und Nitridschichten auf den intermetallischen Verbindungen NiAl und CoGa

Gaßmann, P. (Corresponding author)FZJ*

1996
Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag Jülich

Please use a persistent id in citations: http://hdl.handle.net/2128/21750

Report No.: Juel-3305

Abstract: The formation of oxide and nitride thin films on low indexed surfaces of the intermetallic alloys NiAl and CoGa has been studied. For this purpose, an ultra-high vacuum (UHV) apparatus which facilitates combined in situ investigations by means of scanning tunnelling microscopy (STM), electron energy loss spectroscopy (EELS), low-energy electron diffraction (LEED), Auger electron spectroscopy (AES) and thermal desorption spectroscopy (TDS) was developed. The design of the sampie manipulator allows the quasi-simultaneous use of the techniques without chan ging the sample temperature. In addition, a second apparatus with a combination of the samemethods except for STM was used. After the introduction in chapter 1, a concise review of the theory underlying the various techniques (with emphasis on ehe dielectric theory) is given. Chapter 3 deals with technical aspects of the two UHV apparatuses in which the experiments were performed. The design of the combined STM/EELSapparatus is described in detail. In chapter 4 a synopsis provides the most important properties of the involved materials (aluminium and gallium oxides, III-V nitride semiconductors and the intermetallic alloys NiAl and CoGa). The experimental results and the discussions are presented from chapter 5 to chapter 8. The thesis ends with a summary and an outlook. The results of the investigations can be summarised as follows: $\bullet$ NiAl(210), clean surface: The clean NiAl(210) surface does not exhibit the ideal truncated bulk structure but is reconstructed. Based on the STM and LEED studies a model of the surface is deduced in agreement with the experimental data. $\bullet$ Al$_{2}$O$_{3}$/NiAl(001) and Al$_{2}$O$_{3}$/NiAl(210): The formation of thin oxide films on NiAl(001) and NiAl(210) (i.e. the [...]

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Contributing Institute(s):

1. Publikationen vor 2000 (PRE-2000)

Research Program(s):

1. 899 - ohne Topic (POF3-899) (POF3-899)

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